news release peregrine enables new approach to rf switching in high - power wireless systems ultracmos technology delivers unprecedented combination of 30w power handling and excellent linearity across the uhf/vhf through lte frequency bands san diego, california, s eptember 11 , 2013 -- peregrine semiconductor corporation ( nasdaq: psmi ) , a fabless provider of high - performance radio frequency integrated circuits ( rf ics) , today announced the PE42820 and pe42821 single - pole double throw (spdt) switc h es for high - power wi reless applica tions. t he new switches provide an un precedented combination of high - power handling and excellent linearity while offering an integrated approach that reduce s board area, power consumption and design - in complexity compared to traditional disc rete solutions. this combination makes the PE42820/ 82 1 ideal for transmit/receive , filter bank and antenna band switching applications in high - power rf systems such as wireless infrastructure devices and land mobile radio s for public safety and military en vironments. peregrine s new switching ics are significant in replacing discrete solutions including t raditional pin diode s used in land mobile radios (lmr), and mechanical relay s used in lte - enabled small cells or distributed antenna systems. these disc rete solutions cannot deliver both the high power handling and high linearity required for broadband frequency support as required for lmr and lte convergence . in contrast, the PE42820/ 82 1 switching ics offer high 30w power handling while also enabling exc ellent linearity across the entire 30mhz to 2.7ghz frequency range . this combination, enabled by peregrine s ultracmos?technology with harp enhancements, improves signal clarity and range in high - power rf systems. in addition, peregrine s monolithic ap proach integrates flexible control voltage ranges, which eliminates the need for external bias control circuitry. this reduces the system bill of materials , thereby saving on board space and current consumption, while simplifying design for a more reliable long - term solution . the increased complexity that comes from supporting additional frequency bands in high - power wireless applications necessi tates a new approach to system design , said mark schrepferman, director of peregrine s - more - hi - res photo available through editorial contact or flickr (feel free to publish): http://www.flickr.com/photos/peregrinesemiconductor/9717686635/
news release communicati ons and industrial product line. discrete solutions utilizing pin diode s and mechanical relay s simply cannot support the required linearity fro m uhf/vhf through lte operation while still meeting the size, cost and performance expectations of high - power wi reless systems. our monolithic approach offers a reliable solution to these challenges and provide customers with a route to future proofing their designs as they move to accommodate additional frequency bands . in addition to high linearity (82dbm iip3 @ 850mhz; 76dbm iip3 @ 2.7ghz), the PE42820 and pe42821 switching ics feature low insertion loss ( 0.35 fr om 30mhz - 1ghz; 0.20 from 1 - 2ghz; and 0.80 from 2 - 2.7ghz ), and exceptional esd of 1.5 kv hbm on all pins . the PE42820/1 high - power switches operate with a wide supply range of 2.3v to 5.5v. the pe42821 is a feature and pin - com patible version of the PE42820 with a faster switching time of 6 s. development tool support peregrine semiconductor also announced availability of the PE42820 /1 evaluation kit s , a vailable now through peregrine s global direct sales representatives and worldwide distribution partners. packaging, pricing & availability the pe 42820 / 82 1 switches are supplied in rohs compliant, 5 x 5 mm 32 - lead qfn package s. pricing for both devices starts at $ 11.69 in 10k unit quantifies. samples and volume - production quantities are available today b y contacting peregrine. for more information, visit http://www.psemi.com . about peregrine semiconductor peregrine semiconductor (nasdaq: psmi) is a fab less provider of high - performance radio frequen cy integrated circuits (rfics). our solutions leverage our propri etar y ultracmos technology, an advanced rf silicon - on - insulator process. our products deliver what we believe is an industry - leading combinat ion of performance and monolithic integration, and target a broad range of applications in the aerospace and defense, broadband, industrial, mobile wireless device, test and measurement equipment, and wi reless infrastructure markets. additional informatio n is available at http://www.psemi.com . #### the peregrine semiconductor name, logo , and ultracmos are registered trademarks of peregrine semiconductor corporation in the u.s.a., and other countries. harp is a trademark of peregrine semiconductor corporat ion in th e u.s.a., and other countries. all other trademarks mentioned herein are the property of their respective owners. editorial contact: tiana dixon pr account manager peregrine semiconductor corporation phone: 503.708.1925 tdixon@psemi.com tags/keywords: high - power switch, land mobile radio, wireless infrastructure, small cells, ultracmos, harp, lte
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